Solution 1 Dr P S Neelakanta EEL 3300 ELECTRONICS I UNIT II B Homework Assignments February 3rd 2012
Solution Dr P S Neelakanta EEL ELECTRONICS I UNIT II B Homework
Solution Dr P S Neelakanta EEL ELECTRONICS I UNIT
S Neelakanta EEL ELECTRONICS I UNIT II B Homework Assignments February rd
Solution Dr P S Neelakanta EEL ELECTRONICS
I UNIT II B Homework Assignments February rd
Solution Dr P S Neelakanta EEL
Solution Dr P
(Solution) 1 Dr. P. S. Neelakanta EEL 3300: ELECTRONICS I UNIT II(B) Homework Assignments February 3rd, 2012

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Can you please help me with problem number one in the attached file. Thank you in advance.1 Dr. P. S. Neelakanta EEL 3300: ELECTRONICS I UNIT II(B) Homework Assignments February 3 rd , 2012 ________________________________________________________________________ HW U II(B)-1: In the circuit shown below, the diode is a practical device biased for forward conduction. R 1 = 1.5 K; R 2 = 7.5 K and V s = 12 V. At room temperature, the diode exhibits a reverse saturation current (I s ) of 1.7 pA. What is the load resistance R L ? Calculate the ratio of power dissipated in the diode and the power dissipated in the load (R L ). Express your answer in dB. [ Hint: See Prob. in page U.2.27/Class Notes;I f = I s exp(V f /0.026)] HW U II(B)-2: Problem 2.2 in page U.2.29/ Class notes HW U II(B)-3 : Problem 2.2 in page U.2.29/ Class notes HW U II(B)-4 : In the circuit shown below, v s (t) = V m sin ? t. The diode is a practical Si type. Determine the DC load current, DC load voltage, rectification efficiency, and peak- inverse voltage (PIV) rating for the diode. + Vs Vo R 1 R 2 R L I L